PART |
Description |
Maker |
RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
STH185N10F3-2 |
Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET(TM) III Power MOSFET H2PAK-2 package
|
ST Microelectronics
|
STH260N6F6-2 |
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE Power MOSFET in H2PAK-2 package
|
ST Microelectronics STMicroelectronics
|
MC10XS3412DPNA MC10XS3412CPNA 10XS341209 |
Quad High Side Switch (Dual 10 mOhm, Dual 12 mOhm)
|
Freescale Semiconductor, Inc
|
PSMN1R2-25YL |
N-channel 25 V 1.2 MOhm Logic Level MOSFET
|
Philips Semiconductors
|
FQU10N20C FQD10N20CTM |
N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm
|
Fairchild Semiconductor
|
PSMN1R0-30YLC |
N-channel 30 V 1.15 mOHM logic level MOSFET in LFPAK
|
NXP Semiconductors
|
STL75N8LF6 |
N-channel 80 V, 5.6 mOhm, 18 A, PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET
|
ST Microelectronics
|
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB
|
ON Semiconductor
|
PHN708 |
7 N-channel 80 mohm FET array enhancement mode MOS transistors
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|